Phase transitions involving various atomic configurations on the (001) surfaces of GaAs and InAs were studied by reflection high-energy electron diffraction. A kinetic scheme of the interaction between the As4 flow and the surface was proposed and the main equations describing the transitions were modified so as to correspond to the As4 (rather than As2) flux. A model of the (4 x 2) → (2 x 4) transition was suggested for reconstruction of a layer of metal atoms with subsequent stabilization by the adsorption of arsenic atoms. A considerable difference of the surface transitions in GaAs from that in InAs consisted in greater force constants (more rigid bonds) in the former case. A significant role in the continuous evolution from (2 x 4)β to (4 x 2) phase in GaAs belongs to metastable disordered phases.

Reconstruction Transition (4 x 2) → (2 x 4) on the (001) Surfaces of InAs and GaAs. Y.G.Galitsyn, S.P.Moshchenko, A.S.Suranov: Semiconductors, 2000, 34[2], 174-80