The c(4 x 4) → γ(2 x 4) reconstruction phase transition on the (001)GaAs surface was studied experimentally. It was shown that it was a first-order phase transition. The phase transition was found to exhibit a highly asymmetric hysteresis. The difference between the direct and inverse runs of the hysteresis was explained in terms of the mean field theory of an adsorption-induced phase transition by the substantial contribution of lateral multiparticle interactions in the adsorbate.

Asymmetric c(4 x 4) → γ(2 x 4) Reconstruction Phase Transition on the (001)GaAs Surface. Y.G.Galitsyn, D.V.Dmitriev, V.G.Mansurov, S.P.Moshchenko, A.I.Toropov: JETP Letters, 2007, 84[9], 505-8