Sulfur treatment of GaAs (001) using hydrogen sulfide to obtain a (2 x 6) S-terminated surface was presented. When a GaAs substrate with no epitaxial buffer layer was annealed at up to 580C in a high vacuum (<10-9Torr), a mixture of (3 x 6) and (4 x 6) Ga-terminated reconstructions was observed. After cooling of the substrate to 300C and irradiating it with hydrogen sulfide, a clear (2 x 6) S-terminated surface reconstruction appeared in a few minutes.

(2 x 6) Surface Reconstruction of GaAs (001) Obtained by Hydrogen Sulfide Irradiation. J.Suda, Y.Kawakami, S.Fujita, S.Fujita: Japanese Journal of Applied Physics, 1996, 35, L1498-500