Atomic-resolution images, obtained by scanning tunnelling microscopy of smooth in situ prepared sulfur-terminated GaAs(001) surface reconstruction, were presented. It was found that the 2 x 6 surface reconstruction was predominant on the S-terminated GaAs(001) surface. This 2 x 6 surface reconstruction, of which the cell contains five S-S adatom dimers, was determined by both scanning tunnelling microscopy and reflection high-energy electron diffraction. Atomic models, which were consistent with both scanning tunnelling microscopy images and electron-counting heuristics, were also shown.

2 x 6 Surface Reconstruction of in situ Sulfur-Terminated GaAs(001) Observed by Scanning Tunnelling Microscopy. S.Tsukamoto, N.Koguchi: Japanese Journal of Applied Physics, 1994, 33, L1185-8