The surface reconstruction of in situ prepared sulfur-terminated and sulfur-protected GaAs(001) was studied by using scanning tunnelling microscopy at up to 260C. A new re-ordering process, from the (4 x 6) Ga-stabilized surface to the (2 x 6) S-stabilized surface, was demonstrated; as well as a novel method of air protection using a S passivation layer. In situ observation of the annealing process of this S-protection layer was performed by high-temperature scanning tunnelling microscopy, avoiding adsorption from the environment and verifying that the (2 x 6) structure still became dominant on the S-terminated GaAs(001) surface without the effects of As atoms.

Surface Reconstruction of Sulfur-Terminated GaAs(001) Observed during Annealing Process by Scanning Tunnelling Microscopy. S.Tsukamoto, N.Koguchi: Journal of Crystal Growth, 1995, 150[1], 33-7