Reflection high energy electron diffraction observations of a long period reconstruction of the GaAs (001) surface, which was induced by Si doping in the substrate layer was reported. The reconstruction was described as a long period modulation of the c(2 x 8) structure with the direction of the long period modulation being parallel to the [110] axis. The long period surface structure occurred on the surface of the doped layer at a temperature near 520C under an As4 equivalent to a pressure of 1.0 x 10−6Torr measured with an ion gauge at the sample position. The period of the modulation was 16 times of the (1 x 1) unit cell, and varies with the doping condition.

Long Period Reconstruction of GaAs(001) Surface. A.Sugawara, K.Fujieda, N.Otsuka: Surface Science, 1997, 394[1-3], L174-8