Based upon molecular beam epitaxy scanning tunnelling microscopic observations, a 6 x 2 reconstructed surface which formed in the initial stage of highly strained InAs growth on GaAs(001) was reported. Atomic-resolution scanning tunnelling microscopy images revealed several unique features in its structure and morphology; compared to other InAs or GaAs(001) reconstructions. It was documented that the formation of the 6 x 2 surface was critical for desirable layer-by-layer growth and a dimer-based structure model was proposed.

6 x 2 Surface Reconstruction for the Two-Dimensional Heteroepitaxial Growth of InAs on GaAs. Q.K.Xue, T.Sakurai: Physical Review B, 1998, 57, R6862-5