Extension of analyses of low-energy-electron-diffraction intensities to encompass structure determination of low-index semiconductor surfaces revealed that GaAs(110) was reconstructed. The As atoms protruded from the surface whereas the Ga atoms were displaced inwards such that no nearest-neighbour bond lengths were altered.

Semiconductor Surface Reconstruction - the Rippled Geometry of GaAs(110). A.R.Lubinsky, C.B.Duke, B.W.Lee, P.Mark: Physical Review Letters, 1976, 36, 1058-61