A three-dimensional phase diagram was introduced to describe the dependence of GaAs(111)B surface reconstruction phases as observed by reflection high-energy electron diffraction on growth parameters. The 2 x 2, transitional, and √19 x √19 surface reconstructions correspond to different zones in the phase diagram. A simple equation was found to be good approximation in representing the boundaries that separate these zones. From reflection high-energy electron diffraction pattern studies, As coverages were evaluated to be a larger than 0.79 for the 2 x 2 reconstruction and smaller than 0.58 for the √19 x √19 reconstruction. The dependence of surface morphology and crystal quality on growth condition were discussed in terms of reflection high-energy electron diffraction patterns and growth parameters.

Surface Reconstruction Phase Diagram and Growth on GaAs(111)B Substrates by Molecular Beam Epitaxy. K.Yang, L.J.Schowalter: Applied Physics Letters, 1992, 60[15], 1851