Static surface phase maps of GaAs(111)A and (111)B were generated for a variety of incident As4 flux and substrate temperature conditions. Below a critical As4 flux of JAs4c ≈ 5 x 1015/cm2, four GaAs(111)B surface reconstructions were identified: (2 x 2), (1 x 1)LT, (√19 x √19), (1 x 1)HT. However, above JAs4c, the (√19 x √19) surface phase was eradicated; such that the (1 x 1)LT and (1 x 1)HT structures were linked together to form a single (1 x 1) phase. Only a (2 x 2) reconstruction was observed on the GaAs(111)A surface. Silicon-doped GaAs(111) variable growth temperature (TG) studies were performed; resulting in p-type GaAs(111)A and n-type GaAs(111)B epilayers. Growth temperature-induced bulk electrical conductivity transitions were found for both of the GaAs(111) crystallographic orientations. These conducting/non-conducting transitions were accompanied by a degradation in the quality of the GaAs(111)A surface structure, and were related, in the GaAs(111)B case, to a change in the dynamic surface reconstruction. During deposition, the GaAs(111)A (2 x 2) reconstruction was found to persist for TG > 525C. For TG <525C, faceted surfaces were produced.

The Homoepitaxial Growth of GaAs(111)A and (111)B by Molecular Beam Epitaxy - an Investigation of the Temperature-Dependent Surface Reconstructions and Bulk Electrical Conductivity Transitions. D.A.Woolf, D.I.Westwood, R.H.Williams: Semiconductor Science and Technology, 1993, 8[6], 1075-81