Scanning electron microscopy was applied to directly observe the √19 x √19 and (1 x 1)HT reconstructions and their transitions on the GaAs (111)B vicinal surfaces under As pressure. √19 x √19 reconstruction and 1 x 1 high temperature reconstructions known as (1 x 1)HT reconstructions were observed in dark and bright contrast, respectively. During the transition, √19 x √19 domains start to develop from the macro-step edges on to the lower (1 x 1)HT reconstructed terraces, while (1 x 1)HT domains start to develop from the macro-step edges on to the upper √19 x √19 reconstructed terraces. The transition diagram in the surface coverage of domains showed hysteresis. Since Ga diffusion, As incorporation or re-evaporation were enhanced during the transitions, heavy step bunching with rough macro-step edges was observed.

Real Time Observation of Reconstruction Transitions on GaAs (111)B Surface by Scanning Electron Microscopy. H.W.Ren, M.Tanaka, T.Nishinaga: Applied Physics Letters, 1996, 69[4], 565