Morphologies of GaAs(311) surfaces grown by molecular beam epitaxy were investigated by in situ reflection high-energy electron diffraction and scanning tunnelling microscope. In addition to the (8 x 1) reconstruction, two surface phases, GaAs(311)A-(4 x 1) and GaAs(311)B-(2 x 1) were observed. Both of these surfaces were characterized by wider, atomically smooth terraces with much lower structural anisotropy, when compared to the (8 x 1) reconstructed GaAs(311) surfaces. The observed surfaces have potential as templates for the growth of organized quantum dots, wires, and wells.

GaAs(311) Templates for Molecular Beam Epitaxy Growth - Surface Morphologies and Reconstruction. Z.M.Wang, V.R.Yazdanpanah, J.L.Shultz, G.J.Salamo: Applied Physics Letters, 2002, 81[16], 2965