An analysis was made of minority carrier diffusion and collection in a conductor which contained a regular array of straight dislocations which were perpendicular to the junction plane. A dislocation was characterized by its line recombination velocity and radius. An approximate analytical expression was derived for the charge collection probability in the unit cell of the array. This function permitted the calculation of the effective diffusion length, the internal luminescence efficiency and the contribution to the reverse saturation current of the base of a diode which contained dislocations.

Analysis of Minority Carrier Diffusion in the Presence of a Dislocation Array - Effective Diffusion Length, Luminescence Efficiency and Dark Current. C.Donolato: Solid State Phenomena, 1998, 63-64, 45-52