Comparative in situ reflectance anisotropy spectroscopy studies were made of GaAs1-xNx under MOVPE conditions and in ultra-high vacuum for samples with a nitrogen content of up to 5%. The samples were grown by MOVPE and, after growth, were capped with an amorphous As-layer, transferred to ultra-high vacuum and de-capped by annealing. Three different surface reconstructions (c(4 x 4), (2 x 4), (4 x 2)) were obtained after de-capping and prolonged annealing at different temperatures. These reconstructions, though similar to those found on the GaAs(001) surface show clear nitrogen-related features in the RAS line shape.

MOVPE Growth and Surface Reconstructions of GaAsN(001) Surfaces. R.Ehlert, F.Poser, N.Esser, P.Vogt, W.Richter: Physica Status Solidi B, 2005, 242[13], 2575-80