A study was made of the growth of strained Ga1–xInxP layers on GaP (001) by gas-source molecular-beam epitaxy for x-values from 0.25 to 1. At a growth temperature of 520C, two main differences were found with respect to the well-known GaInAs/GaAs system. Firstly, for x = 0.25 to 0.5, the development of wire-like structures oriented along the [110] direction was observed and, on the other hand, the growth of InP on GaP led to the formation of huge dots in small density. The influence of the growth parameters such as the growth temperature or the phosphine flow rate was presented. The whole set of results was discussed in light of work on the phosphide surface reconstructions with a particular emphasis on the role of the cation-rich one.

Relationship between Surface Reconstruction and Morphology of Strained Ga1-xInxP Layers Grown on GaP (001) by Gas-Source Molecular-Beam Epitaxy. X.Wallart, D.Deresmes, F.Mollot: Applied Physics Letters, 2001, 78[19], 2961