In-induced surface reconstructions on GaSb(001), prepared by molecular-beam epitaxy, were investigated in situ by reflection high-energy electron diffraction and core-level photoelectron spectroscopy. Although In grew 3-dimensionally at room temperature, a 1 x 3 reconstructed surface appeared at 430C after the substrates were annealed. After this 1 x 3 surface was obtained, 4 x 3 and/or 4 x 2 reconstructions were observed as the substrate was cooled, which induced an increase in the In coverage in the 2-dimensional layer. On the 4 x 2 surface, saturation of the In coverage in the 2-dimensional layer was found and a single bonding state of In-Sb, while several bonding states were observed on the 1 x 3 surface. This indicated that a drastic atomic rearrangement results in the termination with an InSb molecular layer at the 4 x 2 surface.

In-Induced Surface Reconstruction on GaSb(001). F.Maeda, M.Sugiyama, Y.Watanabe: Physical Review B, 2000, 62, 1615-8