The room temperature adsorption of H2S on Ge(001)-(2 x 1) was studied using surface-extended X-ray-absorption fine structure, low-energy electron diffraction and Auger electron spectroscopy. The Ge(001)-(2 x 1)-S system formed by a saturation dose followed by an anneal to remove H had a S-Ge bond length of 2.36Å, with S sitting in twofold bridge sites, consistent with breaking of the Ge-Ge dimer reconstruction. Further adsorption of H2S at low or elevated temperatures was kinetically unfavourable, and it was proposed that this was consistent with the surface Ge atoms sitting in non-ideal rather than bulk-terminated positions.

Adsorbate-Induced Dereconstruction in the Interaction of H2S with Ge(001)2 x 1. K.Newstead, A.W.Robinson, S.d'Addato, A.Patchett, N.P.Prince, R.McGrath, R.Whittle, E.Dudzik, I.T.McGovern: Journal of Physics - Condensed Matter, 1992, 4[44], 8441-6