It was noted that Sb induced a c(2 x 2) reconstruction on Ge(113) in which Sb broke one Ge-Ge bond and occupied an interstitial site, in contrast to Sb adsorption on other Si or Ge surfaces. The Sb saturated the 3 dangling bonds per unit cell of the (113) surface; inducing a large strain that was released by occupation of the interstitial site. Two neighbouring Sb at interstitial sites formed a dimer. The structure was using X-ray diffraction and ab initio density-functional theory calculations. The adsorption geometry and the high binding energy lead to the expectation that Sb could not be used as a surfactant for the growth of Si/Ge layers on the (113) surface.

Novel Sb Induced Reconstruction of the (113) Surface of Ge. A.Hirnet, K.Schroeder, S.Blügel, X.Torrelles, M.Albrecht, B.Jenichen, M.Gierer, W.Moritz: Physical Review Letters, 2002, 88[22], 226102 (4pp)