The results of X-ray, SIMS, scanning electron microscopy and atomic force microscopic studies of near-surface regions of Hg1-xCdxTe (111) and (110) structures were presented. These structures were obtained during annealing in the vapour of main components of ISOVPE Hg1-xCdxTe epitaxial layers with the surface implanted with arsenic ions. Berg-Barrett topography method and 2-crystal spectrometry technique were exploited. For calculation of depth dependences of deformations and concentrations of dominating defects in the layer's near-surface regions, the Takagi-Taupin equation and generalized dynamic theory of X-ray scattering were used. From experimental SIMS analysis, the distributions of both impurity and main components of Hg1-xCdxTe solid solution were determined providing more accurately the deformation profiles in near-surface regions of the structures. SIMS and scanning electron microscopy analyses have given evidence of abrupt gradients of content in the Hg1-xCdxTe solid solution, due to small changes of thermodynamic equilibrium conditions of high-temperature annealing in the near-surface regions. These were the cause of formation of a graded-gap structure with strains in the crystal lattice. Atomic force microscopic studies demonstrated that the morphology of Hg1-xCdxTe structures was subjected to the influence of CdTe substrate orientation. Reconstruction of Lattice Structure of Ion-Implanted Near-Surface Regions of Hg1−xCdxTe Epitaxial Layers. A.P.Vlasov, O.Y.Bonchyk, S.G.Kiyak, I.M.Fodchuk, R.M.Zaplitnyy, T.Kazemirskiy, A.Barcz, P.S.Zieba, Z.Swiatek, W.Maziarz: Thin Solid Films, 2008, 516[22], 8106-11