Reflection high-energy electron diffraction and mass-spectrometry were used to study the incorporation behaviour of indium in the molecular beam epitaxy of InAs on InAs (001) and GaAs (001) surfaces. For InAs homo-epitaxy the activation energy, Ea, for In loss was found to be 4.0eV; for the initial stages of strained (Δα/α = 7%) InAs on GaAs hetero-epitaxy, Ea varies from 0.9 to 2.6eV and depends only on surface reconstruction. These results were discussed in terms of binding energetics and strain effects.

Effects of Strain and Surface Reconstruction on the Kinetics of Indium Incorporation in MBE Growth of InAs. K.R.Evans, C.E.Stutz, D.K.Lorance, R.L.Jones: Journal of Crystal Growth, 1989, 95[1-4], 197-200