The anisotropic surface stress changes associated with the transition between different surface reconstructions of InAs and InP (001) surfaces were measured in situ and in real time in a molecular beam epitaxy system. Reflectivity anisotropy of the surface measured at 1.96eV, together with reflection high energy electron diffraction pattern, were used in order to identify the surface reconstructions, and the monitoring of the substrate curvature evolution to determine the variations in surface stress. The results showed the important contribution to the surface stress made by the dimers present in these reconstructed surfaces. For the first time, quantitative values were provided for the surface stress changes due to the transition between surface reconstructions of III–V semiconductor compounds. Values for these changes, of up to 0.7N/m, were obtained: i.e. of the same magnitude as the stress induced by the deposition of one monolayer during the growth of lattice-mismatched III–V semiconductor hetero-epitaxial systems. This indicated the great importance of surface stress evolution in this type of process.

In situ Measurements of InAs and InP (001) Surface Stress Changes Induced by Surface Reconstruction Transitions. D.Fuster, M.U.González, Y.González, L.González: Surface Science, 2006, 600[1], 23-32