Experimental flux-temperature phase diagrams were presented for surface reconstruction transitions on the 6.1Å compound semiconductor. The phase transitions occurred within or near typical substrate temperature ranges for growth of the material by molecular beam epitaxy and therefore provided a convenient temperature standard for optimizing growth conditions. Phase boundaries for InAs (001) [(2 x 4) → (4 x 2)] were presented as a function of substrate temperature and group-V limited growth rate (proportional to flux), for both cracked and uncracked group-V species.

Surface Reconstruction Phase Diagrams for InAs, AlSb, and GaSb. A.S.Bracker, M.J.Yang, B.R.Bennett, J.C.Culbertson, W.J.Moore: Journal of Crystal Growth, 2000, 220[4], 384-92