The room-temperature growth of bismuth on the InAs(110) surface and the Bi-(1 x 1) and Bi-(1 x 2) ordered phases were studied by means of high-resolution ultra-violet photo-emission and high-resolution electron energy-loss spectroscopy. A modified Stransky-Krastanov growth mode at room temperature, and stability of the (1 x 2)-symmetry phase in the 480 to 580K annealing range, were deduced by quantitative analysis of the core-level data and Auger spectra. A Bi 5d and In 4d core-level analysis was presented, and interpreted in terms of a proposed model for the (1 x 2) overlayer reconstruction. The formation of Bi-derived electronic states was monitored during the growth of the (1 x 1)-symmetry phase, exhibiting a semiconducting behaviour at monolayer coverage with a well-defined gap state, at 0.39eV binding energy, related to the Bi p-like dangling bonds. The (1 x 2)-Bi phase was metallic, as indicated by the well-defined Fermi edge and by the metallic-like quasi-elastic peak tail in the energy-loss spectra. The metallicity and the electronic structure of the (1 x 2)-Bi phase were considered with regard to the available geometrical structure.

A High-Resolution Spectroscopy Study on Bidimensional Ordered Structures - the (1 x 1) and (1 x 2) Phases of Bi/InAs(110). V.De Renzi, M.G.Betti, V.Corradini, P.FAntini, V.Martinelli, C.Mariani: Journal of Physics - Condensed Matter, 1999, 11[39], 7447-61