Homo-epitaxial growth of InAs on substrates of various orientations by molecular beam epitaxy was investigated. The arsenic to indium flux ratios for the boundary between arsenic-stable and indium-stable growth conditions for the (¯1¯1¯1) surface were larger than those for the (001) surface. The (001) and (111) surfaces have smooth morphologies, but the surfaces of other low-index orientations were generally faceted or coarse. In particular, the (¯2¯1¯1) surface was covered with inverted pyramidal hollows composed of four facet planes.

Surface Reconstruction and Morphology of InAs Grown by Molecular Beam Epitaxy. K.Sugiyama: Journal of Crystal Growth, 1986, 75[3], 435-40