An evidence for a cation chemical ordering in 2 x 3 reconstructed surfaces of strained InxGa1−xAs layers, locking the composition at the value In0.67Ga0.33As, was obtained by grazing incidence X-ray diffraction. For lower surface concentrations, the reconstruction becomes incommensurate 2 x n and was described by introducing a random distribution of indium-free faults in the commensurate 2 x 3 phase. A quantitative account of the intensity distribution was obtained.

Reconstruction and Chemical Ordering at the Surface of Strained (In,Ga)As Epilayers. M.Sauvage-Simkin, Y.Garreau, R.Pinchaux, A.Cavanna, M.B.Véron, N.Jedrecy, J.P.Landesman, J.Nagle: Applied Surface Science, 1996, 104-105, 646-51