The growth of fullerene films on the InP(001)-(2 x 4) surface and the formation of the C60/InP(001)-(2 x 4) interface were studied by X-ray photoelectron spectroscopy, ultra-violet photo-electron spectroscopy, electron energy loss spectroscopy and low-energy electron diffraction. C60 adsorption causes weak (~0.15eV) upward band bending at the interface. Thick C60 films formed an fcc (111) structure on the InP(001) surface. The (2 x 4) reconstruction was preserved beneath the C60 film. The photo-electron measurements yield a valence band discontinuity of 0.88eV at the C60/InP(001)-(2 x 4) interface.

Electronic Properties of C60/InP(001) Heterostructures. G.Cherkashinin, S.Krischok, M.Himmerlich, O.Ambacher, J.A.Schaefer: Journal of Physics - Condensed Matter, 2006, 18[43], 9841-8