Reflectance anisotropy spectra of InP(100) surfaces were taken either in the MOCVD environment or, after contamination-free transfer to ultra-high vacuum down to 20K. They were correlated with photo-emission and Auger electron spectroscopy measurements to investigate the transition from the P-rich to the In-rich surface reconstruction. The strongest surface stoichiometry-induced changes were found in the reflectance anisotropy spectra at around 3eV photon energy, i.e. in the range of the surface-modified bulk E1 transition. At around 1.8eV, the main peak of a pronounced surface transition was recorded with equal magnitude and sign for the P-rich and for the In-rich surface reconstruction. Two different specific reflectance anisotropy spectra measured with the highest peaks were postulated here to indicate the ordered P-rich and ordered In-rich surface reconstruction, respectively.

Reflectance Anisotropy Spectra for the Transition from the P-Rich to the In-Rich Surface Reconstruction of InP(100). T.Hannappel, S.Visbeck, M.Zorn, J.T.Zettler, F.Willig: Journal of Crystal Growth, 2000, 221[1-4], 124-8