The formation of a clean, antimony rich, c(4 x 4) reconstructed surface of InSb(001) by chemical means, was described. A clean, indium rich surface formed by noble gas ion bombardment and annealing of a bulk sample, displayed a disordered (4 x 2) low-energy electron diffraction pattern with sharp (4 x 1) features. This surface, when saturated to monolayer coverage with either iodine or chlorine and heated to 300C resulted in the desorption of the halogen species leaving a clean, antimony rich c(4 x 4). The structures and compositions of the InSb(001) reconstructed surfaces were compared with those observed on GaAs(001) surfaces. The c(4 x 4) Clean Surface Reconstruction of InSb(001) Formed by UHV Chemical Etching using Iodine and Chlorine. R.G.Jones, N.K.Singh, C.F.McConville: Surface Science Letters, 1989, 208[1-2], L34-41