An experimental study was made of the growth morphology and electronic properties of Sn growth on polar InSb (111) A- and B-type surfaces. On the InSb (100)-c(2 x 8) surface, the valence band and In-4d core level evolution were measured as a function of Sn coverage using high-resolution ultra-violet photo-emission spectroscopy, while the surface symmetry was monitored using low-energy electron-diffraction. A clear (2 x 1)-reconstruction was detected on the (100) surface, while a (1 x 1)-Sn(111) layer was obtained on the (111)-oriented substrates. In interdiffusion into the Sn matrix was observed.

Photoemission and Low-Energy Electron-Diffraction Studies of α-Sn Growth on InSb Surfaces. M.Abu-Samak, P.Fantini, S.Gardonio, E.Magnano, C.Mariani: Physica Scripta, 2005, 71[6], 652-5