The variation in reconstruction in the InSb (111)In surface during adsorption of sulfur and annealing in ultra-high vacuum was investigated by methods of low-energy electron diffraction and Auger electron spectroscopy. It was shown that evolution of reconstruction of the InSb (111)In surface substantially depends on the starting thickness of the adsorbed S layer on the surface. If the thickness of the S layer was only slightly larger than that of the monolayer, reconstruction (1 x 1) was formed on the surface, which transformed into reconstruction (2 x 2) during the subsequent annealing. If the S layer was several monolayers thick, this layer was initially amorphous. Annealing of such a surface at 315 to 325C could lead to the formation of reconstruction (√3 x √3)R30°, which transformed into reconstruction (2 x 2) at a higher temperature. This reconstruction was retained during further annealing until the S atoms vanish from the surface completely. It was shown for the first time that the reconstruction (√3 x √3)R30° could form during adsorption of chalcogenide atoms on the III–V (111)III surface.

Reconstruction of the InSb (111)In Surface as a Result of Sulfur Adsorption. M.V.Lebedev, M.Shimomura, Y.Fukuda: Semiconductors, 2007, 41[5], 521-5