The formation of a Sb/Si(001) interface with artificial surface structure was achieved by Sb adsorption onto the In(4 x 3) surface phase at room temperature followed by annealing between 230 and 280C. Reflection high-energy electron diffraction and scanning tunnelling microscopy studies of the evolution of the surface morphology during annealing revealed that the new Sb-induced surface includes the reconstructed Si layer with fractional density of topmost Si atoms left after the initial In(4 x 3) surface was destroyed by Sb atoms. Upon annealing above ≈350C this structure changes into the conventional Sb(2 x 1) reconstruction accompanied by an increase in surface roughness.

Modification of Sb/Si(001) Interface by Incorporation of In(4 x 3) Surface Reconstruction. D.V.Gruznev, K.Ohmura, M.Mori, T.Tambo, V.G.Lifshits, C.Tatsuyama: Applied Surface Science, 2004, 237[1-4], 99-104