The structure of the In-terminated Si(001) surface was observed by reflection high-energy electron diffraction, scanning tunnelling microscopy and atomic force microscopy. The surface reconstruction induced by In of about 1ML deposited on Si(001)-(2 x 1) surface at about 490C showed clearly a (4 x 3) double domain structure. In and Sb were co-deposited subsequently on the (4 x 3) surface as a function of growth temperatures of 230 to 380C. Surface structure, morphology and crystal quality of the grown InSb films with about 9000Å were characterized by reflection high-energy electron diffraction, scanning electron microscopy and X-ray diffraction. For the deposition on the Si(001)–In(4 x 3) surface at a constant temperature between 230 and 280C, InSb(022) face grows parallel to the Si(001). For the deposition at higher temperatures, the grown films were poly-crystalline. However, for the growth with a gradual increase in temperature from 280 to 380C, InSb(004) peak was observed in X-ray diffraction patterns, suggesting the growth of InSb films heteroepitaxially oriented to Si(001) surface. In contrast with the growth on In(4 x 3) surface, the direct growth on Si(001) surface without In(4 x 3) at 280C results in the growth of polycrystalline InSb.

The Role of (4 x 3) Surface Reconstruction Induced by In Adsorption for the Heteroepitaxial Growth of InSb on Si(001)-2 x 1 Surface. J.M.Li, M.Itoh, M.Yamasaki, K.Okamoto, T.Tambo, C.Tatsuyama: Applied Surface Science, 1998, 130-132, 101-6