The indium-induced Si(001)-(4 x 3) reconstruction was investigated by making surface X-ray diffraction measurements using synchrotron radiation and scanning tunnelling microscopy. A Patterson function analysis permitted the exclusion of In dimers as being a structural element in this reconstruction. A new structural model was presented which included six In atoms, threefold coordinated to Si atoms, and 5 displaced Si atoms per unit cell. Relaxations were determined down to the sixth layer. It was found that so-called trimers, made up of In-Si-In atoms, were a key structural element.

Structure Determination of the Indium Induced Si(001)-(4 x 3) Reconstruction by Surface X-Ray Diffraction and Scanning Tunnelling Microscopy. O.Bunk, G.Falkenberg, L.Seehofer, J.H.Zeysing, R.L.Johnson, M.Nielsen, R.Feidenhans, E.Landemark: Applied Surface Science, 1998, 123-124, 104-10