Platinum-induced surface reconstructions on Si(001) were investigated by scanning tunnelling microscopy. The Si(001) surface showed c(4 x 6)+c(4 x 2)-type reconstruction after Pt hot deposition at 750C. The c(4 x 2) reconstruction was formed by regular arrangement of Pt ad-atoms at the hollow sites between two Si dimers on Si(001). The c(4 x 6) structure was formed by long-range ordering of Si dimers superimposed on the c(4 x 2) reconstruction. The surface reconstruction changes with the local Pt coverage and missing dimer density. An atomic model for c(4 x 6)+c(4 x 2) was proposed based on the observed c(4 x 4) surface reconstruction, a new surface reconstruction, which was observed following a high-temperature anneal at 900C. The c(4 x 4) surface reconstruction was regular and ordered in both the dimer-row direction and the direction perpendicular to the dimer rows. The reconstruction was formed by the regular arrangement of Si dimers and Pt ad-atoms sitting on top of the hollow sites surrounded by two dimers. An atomic model for this new reconstruction was proposed.

Surface Reconstruction of Pt/Si(001). C.Ji, R.Ragan, S.Kim, Y.A.Chang, Y.Chen, D.A.A.Ohlberg, R.S.Williams: Applied Physics A, 2005, 80[6], 1301-4