A study was made of room-temperature adsorption of cobalt over a range of sub-monolayer coverages on a reconstructed Si(100)-(2 x 1) surface. The measurements were performed by using the methods of high-resolution (∼140meV) photo-electron spectroscopy using synchrotron radiation (hν = 130eV). An analysis of changes in the Si 2p line-shape in the course of cobalt deposition showed that metal adsorption led to a loss of the initial substrate surface reconstruction. The results were interpreted by using a model in which adatoms arriving at the silicon surface were incorporated into the uppermost atomic monolayer: occupying positions between four Si atoms, and forming rows parallel to the 〈110〉 directions in the substrate. Silicon Surface Reconstruction Lost upon Cobalt Adsorption. M.V.Gomoyunova, I.I.Pronin, N.R.Gall, S.L.Molodtsov, D.V.Vyalykh: Technical Physics Letters, 2003, 29[6], 496-9