It was noted that the extreme surface sensitiveness of the Si-L2,3 VV Auger process and its ability to probe the atomic electron distribution in the direct neighbourhood of the L2,3-core-hold made this electron spectroscopic technique a candidate for investigations of the local changes in the electron distribution due to surface reconstruction. The influence of the (2 x 1) reconstruction of the Si(100) surface upon the Si-L2,3 VV Auger line-shape was shown explicitly.

The Influence of the (2 x 1) Reconstruction of the Si(100) Surface on the Si-L2,3 VV Auger Lineshape. A.G.B.M.Sasse, M.A.van der Hoef, H.Wormeester, A.van Silfhout: Solid State Communications, 1989, 71[1], 65-9