The initial stage of crystal growth in the Pd/Si(100) surface for coverages of less than 30ML was investigated at annealing temperatures between 20C and 1100C using scanning tunnelling microscopy, low-energy electron diffraction, Auger electron spectroscopy and EELS. For deposition at room temperature, the growth mode was of the Volmer-Weber type and small clusters composed of a few atoms nucleated on the substrate Si dimer rows. As the temperature increased, small clusters coalesced and these coalesced clusters had a 2 x 2 structure above 800C. The c(4 x 2) and c(4 x 2) + c(4 x 6) structures appear above 900C at ¼ML and were the same as those of the Pt/Si(100) surface. For coverages higher than ¼ML, excess Pd atoms formed silicide (PdSi) islands on the superstructure surface in the Stranski-Krastanov mode. The electronic structure of the Pt/Si(100) surface depending on the coverage and annealing temperature was discussed from the Auger electron spectroscopy and EELS data.

Nucleation and Surface Reconstruction of Pd on Si(100) Observed by Scanning Tunnelling Microscopy. H.Itoh, S.Narui, H.Tanabe, T.Ichinokawa: Surface Science, 1993, 284[3], 236-46