The higher-order Si(100)-c(8 x 8) surface reconstruction was studied using scanning tunnelling microscopy and low-energy electron diffraction. The high-resolution scanning tunnelling microscopic images show that long-range ordering of rectangular cells were the building blocks of this reconstruction. The Si–Si ad-dimers were identified and it was determined that 3 pairs of ad-dimers constituted each rectangular cell. The ad-dimer direction was parallel to the longer side of these rectangular cells.

Scanning Tunnelling Microscopy Study of Higher-Order Si(100)-c(8 x 8) Surface Reconstruction. M.A.K.Zilani, H.Xu, X.S.Wang, N.Yakovlev, A.T.S.Wee: Journal of Physics - Condensed Matter, 2008, 20[39], 395003 (6pp)

c(4 x 2) Reconstruction of Si (100)