Three experiments were performed on the (100) and (111) surfaces at high temperatures using an ultra-high vacuum scanning tunnelling microscope. Firstly, the initial stage of the crystallization process was directly investigated on the Si(111) surface at a phase transition temperature of about 860C. The (7 x 7) domains nucleated from the step edges and expanded towards the inner regions of the terraces, and the steps became straight [¯1¯12] steps. Secondly, the high-temperature nano-fabrication method was applied to surfaces so as to create an hexagonal pyramid and a crater on the Si(111) surface, and a quadrangular pyramid on the Si(100) surface at 600C. The (5 x 5) domains could be observed on narrow terraces, due to the relaxation of surface energy. An attempt was made to deposit Au atoms onto silicon surfaces. The Au atoms deposited onto a high-temperature silicon surface migrated to the observation area while forming 5 x 1 structures. The Au atoms then diffused into the bulk structure of silicon, and (7 x 7) domains again covered the surface.

Observation of Surface Reconstruction and Nano-Fabrication on Silicon under High Temperature using a UHV-STM. M.Iwatsuki, S.Kitamura, T.Sato, T.Sueyoshi: Applied Surface Science, 1992, 60-61, 580-6