The results of ab initio pseudopotential calculations of various aspects of Si(111) surface with adsorbed B and other group-III impurities were reported. The reconstruction of the surface due to adsorbed group-III impurities was studied along with the surface core level shifts of the Si(111)/B system. Si epitaxial growth on Si(111)/B surface and the possible formation of a δ-doped layer were also examined.

Si(111)/B Surface Reconstruction and Related Phenomena. J.Chang, M.J.Stott: Physica Status Solidi B, 1997, 200[2], 481-9