Stress tensors and their influence on the reconstruction of Si(111) surfaces were calculated using a “statics” computer simulation technique based on a semi-empirical potential energy function. Analyses were aimed at investigating long-range stress interactions on ideal and defective Si(111) surfaces. Calculations indicate that the perfect Si(111) surface was under a large compressive stress. Formation of ledges and surface vacancies, in particular, were found to reduce this compressive stress.

The Effect of Surface Stress on the Reconstruction of the Si(111) Surface. E.Pearson, T.Halicioglu, W.A.Tiller: Surface Science, 1986, 168[1-3], 46-51