Surface morphology of the Si(111) samples quenched with a cooling rate of about 350C/s was studied by scanning tunnelling microscopy. In all quench experiments the (7 x 7) reconstruction was the main structure observed. No traces of other structures were found by means of low-energy electron diffraction. The formation of triangular residual islands in the middle of wide terraces was revealed by scanning tunnelling microscopy for initial quench temperatures in the range 1150–1250C. Formation of solid structure-less residual islands resulted from a quench from temperatures of about 1300C. Upon quenching from even higher temperatures, (2 x 1) structure domains appear within solid islands. All island types must be the result of local compression of the adatom gas by the growing (7 x 7) reconstruction spots during quench.

Generation of the Si(111)-(2 x 1) Surface Reconstruction by a Rapid Radiation Quench. M.A.Kulakov: Surface Science, 1997, 372[1-3], L266-70