Conventional precipitation theory showed that first-order reconstruction transitions should have marked consequences for the growth of crystals. The kinetics of the Si(111) 2 x 1 to 7 x 7 reconstruction were explained, and the consequent effect upon growth was found in previous observations of a 6 orders-of-magnitude drop in vacancy cluster concentration at a pulling-rate of 0.5cm/min.

Effect of Reconstruction of a Semiconductor Surface on the Crystal Growth. J.A.Van Vechten: Applied Physics Letters, 1975, 26[11], 593