The hetero-epitaxial growth of InSb films via In-induced surface reconstructions such as (2 x 2)-In and (√3 x √3)In on a Si(111) substrate was carried out by using a two-step growth procedure in an ultra-high vacuum chamber. The samples were characterized by high-energy electron diffraction, X-ray diffraction, scanning tunnelling microscopy and Hall measurements. The reflection high-energy electron diffraction and X-ray diffraction (φ-scan) patterns of the samples showed the existence of InSb crystals rotated by 30° with respect to Si substrate. From comparison between the growth of InSb films via (2 x 2)In and that via (√3 x √3)In, it was found that the origin of the 30°-rotated InSb was due to the existence of the In–Sb bi-layer formed by 1ML Sb deposition onto the In-induced surface reconstructions. Heteroepitaxial Growth of Rotated InSb Films on a Si(111) Substrate via 2 x 2-In Surface Reconstruction. M.Mori, M.Saito, Y.Yamashita, K.Nagashima, M.Hashimoto, C.Tatsuyama, T.Tambo: Journal of Crystal Growth, 2007, 301-302, 207-11