The formation of iron disilicide (β-FeSi2) nanoclusters as a result of solid-state epitaxy at 500 to 700C and an Fe coverage of 0.05 to 0.5 monolayer on a B-modified Si(111)-(√3 x √3)R30° surface was studied by scanning tunnelling microscopy. It was established that the number density of β-FeSi2 nanoclusters on the Si(111)-(√3 x √3)R30°-B surface significantly exceeds the density of silicide clusters formed on the atomically clean Si(111) surface with a 7 x 7 reconstruction for the analogous iron coverages and annealing temperatures. At the same time, the density of point defects and clusters possessing metallic conductivity on the Si(111)-(√3 x √3)R30°-B surface was several orders of magnitude lower than on the Si(111)-(7 x 7) surface treated under identical conditions.

Increase in the Density of β-FeSi2 Nanoclusters on a Si(111) Surface by Means of Si(111) √3 x √3R30°-B Reconstruction. M.V.Ivanchenko, E.A.Borisenko, V.G.Kotlyar, O.A.Utas, V.V.Ustinov, V.G.Lifshits: Technical Physics Letters, 2006, 32[5], 396-8