Observations were made of a (5 x 5) reconstruction, on the pure Si (111) surface, which was induced and stabilized by tensile strain. The stabilization was so strong that the reconstruction survived extended exposure to air and the formation of a native oxide layer. Modelling of experimental high-resolution transmission electron microscopic profile images indicated that the native oxide was ordered. The (5 x 5) reconstruction could also be induced at an initially unreconstructed Si-oxide interface by applying tension, and annealing.

Observation of (5 x 5) Surface Reconstruction on Pure Silicon and its Stability Against Native-Oxide Formation. A.Ourmazd, D.W.Taylor, J.Bevk, B.A.Davidson, L.C.Feldman, J.P.Mannaerts: Physical Review Letters, 1986, 57, 1332-5