Results of a study designed to investigate the possibility of using the Si(111)- Ge(5 x 5) surface reconstruction as a template for In cluster growth were described. As with Si(111)-7 x 7, the In adatoms preferentially adsorb in the faulted half-unit cell, but on Si(111)- Ge(5 x 5) a richer variety of cluster geometries were found. In addition to the clusters that occupy the faulted half-unit cell, clusters that span two and four half-unit cells were found. The latter have a triangular shape spanning one unfaulted and three, nearest neighbour, faulted half-unit cells, Triangular clusters in the opposite orientation were not found. Many of the faulted half-unit cells had a streaked appearance consistent with adatom mobility.

Patterned Growth of Nanoscale In Clusters on the Si(111)-7 x 7 and Si(111)-Ge(5 x 5) Reconstructions. J.M.MacLeod, D.Psiachos, A.G.Mark, M.J.Stott, A.B.McLean: Journal of Physics - Conference Series, 2007, 61, 800-4