The silicon (111)-(7 x 7) surface reconstruction was observed by surface-sensitive transmission-electron microscopy. The topography of the reconstructed surface was accounted for by the cooperative motion of surface atoms over large areas via a new process involving the generation of so-called surface dislocations to relieve the backbond-induced surface stresses.

"Surface Dislocation" Process for Surface Reconstruction and Its Application to the Silicon (111) 7 x 7 Reconstruction. P.M.Petroff, R.J.Wilson: Physical Review Letters, 1983, 51, 199-202