The local density of states on and near an ideal vacancy on the unreconstructed and unrelaxed ideal (111) surface of silicon was calculated by means of a new generalized cluster-Bethe-lattice method. The essence of the method was shortly described and illustrated on this particular example. The results compare well with photoemission experiments and calculations of other authors. They were discussed within the context of the existing ‘vacancy’ models of the Si(111)-(7 x 7) reconstruction.

Local Density of States of the Si(111) Surface with Vacancies and its Reconstruction. M.Tomášek, A.A.Karpušin, A.N.Sorokin: Vacuum, 1986, 36[7-9], 445-6