An investigation was made of the Sb-induced reconstruction of the Si(112)-(2 x 1) surface using low-energy electron diffraction and synchrotron radiation photo-electron spectroscopy. When Sb was deposited onto the clean Si(112) surface at 300C, a sharp hexagonal low-energy electron diffraction pattern with weak “n/5” fractional spots was observed, which was very similar to one of the Sb/Si(111)-(1 x 1) surfaces. The Si 2p and Sb 4d core level photoemission spectra were measured. The results showed that the Si 2p core-level spectrum was composed of 2 surface-related components: a surface component at +0.2eV and a small surface-related component at –0.2eV with respect to the bulk component. In addition, the Sb 4d core-level spectrum was well reproduced with one doublet component. The results revealed that Sb atoms were adsorbed at unique sites on a Si(111)-(1 x 1) surface.

Photoemission Study on the Sb-Induced Reconstruction of the Si(112) Surface. E.S.Cho, M.K.Kim, J.W.Park, H.Hur, C.Jeon, J.Y.Baik, C.C.Hwang, T.H.Kang, B.Kim, K.S.An, C.Y.Park, S.B.Lee: Surface Science, 2005, 591[1-3], 38-44